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Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE(sat) tfi typ
= 600 V = 70 A < 1.8 V = 82 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ 600 V TC = 25C
Maximum Ratings 600 600 20 30 70 30 150 ICM = 60 190 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C
TO-247 AD (IXGH)
C (TAB) G C E
TO-268 (IXGT)
G E C (TAB)
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268
Features Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers
1.13/10Nm/lb.in. 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 TJ = 25C TJ = 150C 5.0 200 3 100 TJ = 25C 1.8 V A mA nA V
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 24 A, VGE = 15 V
(c) 2004 IXYS All rights reserved
DS99134A(04/04)
IXGH 30N60B2D1 IXGT 30N60B2D1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 26 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 145 40 66 IC = 24 A, VGE = 15 V, VCE = 300 V 9 22 13 Inductive load, TJ = 25C IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 15 110 82 0.32 13 Inductive load, TJ = 125C IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 17 0.22 200 150 0.9 200 150 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 24 A; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns
e
Dim.
0.6 mJ ns ns mJ ns ns mJ 0.65 K/W
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ =150C 1.6 2.5 4 V V A ns ns
IF = 30 A, VGE = 0 V, Pulse test t 300 s, duty cycle d 2 %
IF = 30 A, VGE = 0 V, -diF/dt =100 A/s, TJ = 100C VR = 100 V TJ = 100C 100 IF = 1 A; -di/dt = 100 A/s; VR = 30 V 25
0.9 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGH 30N60B2D1 IXGT 30N60B2D1
Fig. 1. Output Characteristics @ 25 Deg. C
50 45 40 35 VGE = 15V 13V 11V 300
Fig. 2. Extended Output Characteristics @ 25 deg. C
VGE = 15V 13V 11V
9V
250
I C - Amperes
30 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 5V 7V
I C - Amperes
200
150 100
9V
7V 50 5V 0 0 2 4 6 8 10 12 14 16 18
V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C
50 45 40 VGE = 15V 13V 11V 1.3
V C E - Volts Fig. 4. Dependence of V CE(sat) on Tem perature
9V
1.2
I C = 48A
I C - Amperes
35 30 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 5V 7V
V C E (sat)- Normalized
V GE = 15V
1.1
1.0 I C = 24A
0.9 0.8
I C = 12A 0.7 -50 -25 0 25 50 75 100 125 150
V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
4.2 3.9 3.6 TJ = 25C 250 225 200
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
3 2.7 2.4 2.1 1.8 1.5 1.2 5 6 7 8
I C - Amperes
3.3
VC E - Volts
I C = 48A 24A 12A
175 150 125 100 75 50 25 0
TJ = -40C 25C 125C
9
10 11
12 13 14 15 16 17
4
5
6
7
8
9
10
11
12
13
V G E - Volts
(c) 2004 IXYS All rights reserved
V G E - Volts
IXGH 30N60B2D1 IXGT 30N60B2D1
Fig. 7. Transconductance
45 40 35 TJ = -40C 25C 125C 2.7 2.4 2.1 I C = 48A TJ = 125C VGE = 15V VCE = 400V
Fig. 8. Dependence of Turn-Off Energy on RG
E off - milliJoules
g f s - Siemens
30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 200 225 250
1.8 1.5 1.2 0.9 0.6 0.3 0 0
I C = 24A
I C = 12A 10 20 30 40 50 60 70 80
I C - Amperes Fig. 9. Dependence of Turn-Off Energy on IC
2 1.8 1.6 R G = 5 VGE = 15V VCE = 400V 2 1.8 1.6 R G = 5 VGE = 15V VCE = 400V
R G - Ohms Fig. 10. Dependence of Turn-Off Energy on Tem perature
E off - MilliJoules
1.2 1 0.8 0.6 0.4 0.2 0 10 15 20 25 30
E off - milliJoules
1.4 TJ = 125C
1.4 1.2 1 0.8 0.6 0.4 0.2 0
I C = 48A
I C = 24A
TJ = 25C
I C = 12A 25 35 45 55 65 75 85 95 105 115 125
35
40
45
50
I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG
700 260
TJ - Degrees Centigrade Fig. 12. Dependence of Turn-Off Sw itching Tim e on IC
240
Switching Time - nanosecond
Switching Time - nanosecond
600
td(off) tfi - - - - - TJ = 125C VGE = 15V VCE = 400V
220 200 180 160 140 120 100 80 60 TJ = 25C TJ = 125C
td(off) tfi - - - - - R G = 5 VGE = 15V VCE = 400V
500 400 300
I C = 12A I C = 24A
200 100 0 10
I C = 48A
20
30
40
50
60
70
80
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
10
15
20
I C - Amperes
25
30
35
40
45
50
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGH 30N60B2D1 IXGT 30N60B2D1
Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature
220 200 180 160 140 120 100 80 25 35 45 I C = 48A 24A 12A 3 15
Fig. 14. Gate Charge
VCE = 300V I C = 24A I G = 10mA
Switching Time - nanosecond
td(off) tfi - - - - - R G = 5 VGE = 15V VCE = 400V
I C = 12A 24A 48A
12
VG E - Volts
55 65 75 85 95 105 115 125
9
6
0
TJ - Degrees Centigrade
0
10
20
30
40
50
60
70
Q G - nanoCoulombs
Fig. 15. Capacitance
10000 f = 1 MHz C ies 1000
Capacitance - p F
C oes 100
C res 10 0 5 10 15 20 25 30 35 40
V C E - Volts
Fig. 16. Maxim um Transient Therm al Resistance
1.0
R (th) J C - (C/W)
0.5
0.1 1 10
Pulse Width - milliseconds
100
1000
(c) 2004 IXYS All rights reserved
IXGH 30N60B2D1 IXGT 30N60B2D1
60 A 50 IF 40 1000 nC 800 Qr
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
IRM
30 A 25 20 15
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
TVJ=150C
30
600
TVJ=100C
20
400 10
TVJ=25C
10 0
200
5 0
0
1
2 VF
3V
0 100
A/s 1000 -diF/dt
0
200
400
600 A/s 1000 800 -diF/dt
Fig. 17. Forward current IF versus VF
2.0
Fig. 18. Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 19. Peak reverse current IRM versus -diF/dt
20 V VFR 15
TVJ= 100C VR = 300V
TVJ= 100C IF = 30A VFR tfr
1.00 tfr 0.75 s
1.5 Kf 1.0
trr 80
IRM
70 0.5
IF= 60A IF= 30A IF= 15A
10
0.50
5
0.25
Qr
0.0 60 0 0.00 600 A/s 1000 800 diF/dt
0
40
80
120 C 160 TVJ
0
200
400
600 -diF/dt
800 A/s 1000
0
200
400
Fig. 20. Dynamic parameters QQ IRM Fig. 20. Dynamic parameters r, r, IRM versus TVJ versus TVJ
1 K/W
Fig. 21. Recovery time trr versus -diF/dt
Fig. 22. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162
0.1 ZthJC
1 2 3
0.01
0.001 0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1
s t
1
Fig. 23. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505

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